碘化铯 NaI(Tl ) 溴化铈(Br3Ce)碘化纳(NaI) 溴化镧(LaBr3:Ce) 氯化镧(LaCl3) 晶体 Wafer
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Specification for 碘化铯 NaI(Tl ) 溴化铈(Br3Ce)碘化纳(NaI) 溴化镧(LaBr3:Ce) 氯化镧(LaCl3) 晶体 Wafer
Item | Dimeter(直径)or 尺寸(size) | Type/dopant(类型/掺杂) |
Orientaion |
crystal struction | Capsulation |
发射峰值(nm) | 光子转换效率(Photon/MeV) | 能量分辨率(Cs-137) | 能量非线性 |
Decay time(ns) | 本底 |
---|---|---|---|---|---|---|---|---|---|---|---|
LaBr3 | 25.4mm 50.8mm |
Ce | <100><110><111> |
tetragonal | seal | 360~385 | 60000 | ≤3.2% | ≤4% | ≤20 | NaI |
LaCl3 | 25.4mm 50.8mm |
Ce | <100><110><111> |
tetragonal | seal | 360~385 | 60000 | 2.6~3.2%For gamma energy spectrometer 3~4.5%For gamma ray logs |
≤4% | ≤20 | NaI |
NaI | 25.4mm 50.8mm |
Tl | <100><110><111> |
tetragonal | seal | 415 | 60000 | 4~5% | ≤4% | ≤0.25 | NaI |
CsI | 25.4mm 50.8mm |
Na | <100><110><111> |
tetragonal | seal | 550 | 60000 | 4~5% | ≤4% | ≤1 | NaI |
GAGG | 25.4mm 50.8mm |
Ce | <100><110><111> |
tetragonal | seal | 360~385 | 60000 | 6% | ≤4% | ≤90 | NaI |
CeBr3 |
25.4mm 50.8mm | Intrinsic | <100><110><111> | tetragonal | seal | 360~385 | 60000 | 4~5% |
≤4% | ≤20 | NaI |
BGO |
25.4mm 50.8mm | Intrinsic | <100><110><111> | tetragonal | seal | 480 | 8-10 | 4~5% |
≤4% | ≤300 | NaI |
SrI2 |
25.4mm 50.8mm | Eu+ | <100><110><111> | tetragonal | seal | 435 | 70000 | 2.4~2.9% |
≤4% | ≤1100 | NaI |
LuAG |
25.4mm 50.8mm | Ce/Pr | <100><110><111> | tetragonal | seal | 520 | 8-10 | 4~5% |
≤4% | ≤80 | NaI |
LSO |
25.4mm 50.8mm | Ce | <100><110><111> | tetragonal | seal | 420 | 8-10 | 4~5% |
≤4% | ≤42 | NaI |
CWO/CdWO4 |
25.4mm 50.8mm | Intrinsic | <100><110><111> | tetragonal | seal | 480 | 8-10 | 4~5% |
≤4% | ≤1.4x103 | NaI |
LYSO |
25.4mm 50.8mm | Ce | <100><110><111> | tetragonal | seal | 410 | 8-10 | 4~5% |
≤4% | ≤47 | NaI |
CLYC(Cs2LiYCl6:Ce) |
25.4mm 50.8mm | Ce | <100><110><111> | tetragonal | seal | 480 | 8-10 | 4~5% |
≤4% | ≤300 | NaI |
CaF2 |
25.4mm 50.8mm | Eu | <100><110><111> | tetragonal | seal | 435 | 8-10 | 4~5% |
≤4% | ≤940 | NaI |
塑料 闪烁体 |
25.4mm 50.8mm 76.5mm 100mm | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |